Gallium antimonide (GaSb) is a semiconductor material that is used in the production of electronic and optoelectronic devices. GaSb wafers are thin, circular discs of GaSb that are used as a substrate material in the manufacturing of these devices.
GaSb is known for its high electron mobility and its ability to generate light in the mid-infrared spectrum, which makes it useful in a variety of optoelectronic applications. It is used in the production of lasers, detectors, and other optoelectronic devices that operate in the mid-infrared range.
GaSb wafers are used in a variety of applications, including military and aerospace systems, medical imaging, and environmental monitoring. They are particularly useful in optoelectronic applications that require the ability to operate in the mid-infrared range.
There are several key specifications to consider when working with GaSb wafers:
- Diameter: GaSb wafers are typically available in a range of diameters, including 2 inches, 3 inches, 4 inches, and 6 inches. The diameter of the wafer can affect the cost and performance of the devices that are manufactured on it.
- Thickness: GaSb wafers are available in a range of thicknesses, typically ranging from 100 micrometers to 750 micrometers. The thickness of the wafer can affect the strength and flexibility of the devices that are produced on it.
- Dopant concentration: GaSb wafers can be doped with impurities such as aluminum, zinc, or beryllium to modify their electrical properties. The concentration of dopants in the wafer can affect the performance of the devices that are manufactured on it.
- Surface roughness: The surface roughness of GaSb wafers can affect the quality of the devices that are produced on them. GaSb wafers with a smooth surface may be preferred for certain applications, such as the production of high-quality integrated circuits.
- Crystalline quality: The crystalline quality of GaSb wafers can affect the performance of the devices that are produced on them. GaSb wafers with high crystalline quality may be preferred for certain applications, such as the production of high-performance transistors.
| Specification | Range |
|---|---|
| Wafer Diameter | 2 inches, 3 inches, 4 inches, 6 inches, and 8 inches |
| Thickness | 350 µm, 500 µm, 675 µm, 725 µm, 775 µm, 825 µm, 900 µm, and 1 mm |
| Orientation | (100), (111)A, (111)B, and (211) |
| Type | N-type and P-type |
| Dopant Concentration | 1E17 – 1E19 cm^-3 |
| Surface Finish | Single or double-sided polished |
| Resistivity | 0.001 – 100 ohm-cm |
| Carrier Mobility | 200 – 1000 cm^2/Vs |
| EPD | <1E5 cm^-2 |
| Package | Single wafer container or multiple wafer container |
These are the standard specifications for GaSb wafer. However, custom specifications can also be provided based on the specific requirements of the application.
