WIDE-BANDGAP WAFERS
SUPPLIED TO TECHNICAL SPECIFICATION

Gallium Nitride (GaN) Wafer

GaN substrates for high-power, high-frequency and optoelectronic research. Free-standing GaN and GaN-on-sapphire, silicon or SiC configurations can be evaluated.

2 inch4 inch6 inchCustom diameter
Gallium Nitride (GaN) Wafer — representative product visual
GaNRepresentative visual
RFQ CONFIGURATION

Specify wafer diameter and technical requirements together.

Complete the technical selections before adding the item. Unknown fields may remain blank; availability, lead time and commercial terms are confirmed in the quotation.

Mention uncertain specifications in the technical notes. No account registration needed.

SPECIFICATION HELP

What do these options mean?

If you are unsure, choose the custom option in the RFQ. The technical team will clarify the required specification for the application.

SSP / DSP

Single-side or double-side polished wafer finish.

Orientation

The crystal plane, such as (100), (111) or an application-specific cut.

Off-axis

A controlled angular offset of the surface from the principal crystal plane.

Scope

Supply to technical specification; suitability and lead time are confirmed in the quotation.

Documents

State any required analysis certificate, drawing or test report. Available documents are confirmed for the product and delivery scope in the quotation.

TYPICAL SPECIFICATION ENVELOPE

Configure the requirement, not just the product name.

Diameter2"–6"
PlatformFree-standing, sapphire, Si, SiC
PolarityGa-face or N-face
TypeUndoped, N-type, semi-insulating
FinishEpi-ready
OptionsTemplate or epitaxial structure
APPLICATIONS

Built around the process.

01Power electronics
02RF
03UV/blue LEDs
04HEMT research
NEED A NON-STANDARD SPEC?

Send the drawing, target value or process condition.

Our technical team will evaluate the feasible supply configuration before quotation.

Complete product configuration ↑