III–V WAFERS
SUPPLIED TO TECHNICAL SPECIFICATION

Indium Arsenide (InAs) Wafer

Indium arsenide wafers supplied for infrared detectors, high-electron-mobility devices, quantum structures and III–V epitaxial research. Diameter, orientation, conductivity and surface finish are reviewed for the intended process.

1 inch2 inch3 inch4 inch6 inch8 inchCustom diameter
Indium Arsenide (InAs) Wafer — representative product visual
InAsRepresentative visual
RFQ CONFIGURATION

Specify wafer diameter and technical requirements together.

Complete the technical selections before adding the item. Unknown fields may remain blank; availability, lead time and commercial terms are confirmed in the quotation.

SPECIFICATION HELP

What do these options mean?

If you are unsure, choose the custom option in the RFQ. The technical team will clarify the required specification for the application.

SSP / DSP

Single-side or double-side polished wafer finish.

Orientation

The crystal plane, such as (100), (111) or an application-specific cut.

Off-axis

A controlled angular offset of the surface from the principal crystal plane.

Scope

Supply to technical specification; suitability and lead time are confirmed in the quotation.

Documents

State any required analysis certificate, drawing or test report. Available documents are confirmed for the product and delivery scope in the quotation.

TYPICAL SPECIFICATION ENVELOPE

Configure the requirement, not just the product name.

Diameter2"–4" typical
Orientation(100), (111) options
ConductivityN-type or semi-insulating options
FinishEpi-ready SSP or DSP
ThicknessStandard or custom
DocumentationAnalysis certificate
APPLICATIONS

Built around the process.

01Infrared detectors
02High-mobility electronics
03Quantum structures
04III–V epitaxy
NEED A NON-STANDARD SPEC?

Send the drawing, target value or process condition.

Our technical team will evaluate the feasible supply configuration before quotation.

Complete product configuration ↑