III–V WAFERS
SUPPLIED TO TECHNICAL SPECIFICATION

Gallium Antimonide (GaSb) Wafer

Gallium antimonide substrates for infrared detectors, lasers, thermophotovoltaics and advanced III–V epitaxy. Diameter, orientation and surface requirements are reviewed for the intended application.

1 inch2 inch3 inch4 inch6 inch8 inchCustom diameter
Gallium Antimonide (GaSb) Wafer — representative product visual
GaSbRepresentative visual
RFQ CONFIGURATION

Specify wafer diameter and technical requirements together.

Complete the technical selections before adding the item. Unknown fields may remain blank; availability, lead time and commercial terms are confirmed in the quotation.

SPECIFICATION HELP

What do these options mean?

If you are unsure, choose the custom option in the RFQ. The technical team will clarify the required specification for the application.

SSP / DSP

Single-side or double-side polished wafer finish.

Orientation

The crystal plane, such as (100), (111) or an application-specific cut.

Off-axis

A controlled angular offset of the surface from the principal crystal plane.

Scope

Supply to technical specification; suitability and lead time are confirmed in the quotation.

Documents

State any required analysis certificate, drawing or test report. Available documents are confirmed for the product and delivery scope in the quotation.

TYPICAL SPECIFICATION ENVELOPE

Configure the requirement, not just the product name.

Diameter2"–4" standard
Orientation(100), (111)A/B
TypeN-type, P-type, undoped
FinishSSP or DSP
OptionsEpi-ready or custom off-cut
DocumentationAnalysis certificate
APPLICATIONS

Built around the process.

01Mid-IR detectors
02Lasers
03TPV
04III–V epitaxy
NEED A NON-STANDARD SPEC?

Send the drawing, target value or process condition.

Our technical team will evaluate the feasible supply configuration before quotation.

Complete product configuration ↑