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18.05.2021
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Silicon Wafer

Silicon Wafer şu anda yarı iletken entegre devrelerde, diyotlarda, epitaksiyel yonga tabakalarında, güneş pillerinde ve diğer alanlarda kullanılan en önemli element yarı iletken malzemedir ve elektronik endüstrisinin temel malzemesidir.

Termal oksidasyon, silikon teknolojisinde önemli bir süreçtir. Silikon, silikon gofretin yüzeyinde yoğun bir silikon dioksit (SiO2) yalıtım filmi oluşturmak için yüksek sıcaklıklarda su buharı ve oksijen gibi oksitleyici maddeler içeren gazlarla reaksiyona girer. Kararlı kimyasal özelliklere sahiptir ve entegre devrelerin imalatında yaygın olarak kullanılmaktadır.

Önerilen Ürünler

Silicon wafer CZ (Czochralski)

  • Diameter: 2 inch   |  3 inch   |  4 inch   |  6 inch   |  8 inch
  • Type: N type (Phosphorous, Antimony, Arsenic doped)   |  P type (Boron doped)
  • Resistivity: 0.001-0.01 ohm.cm   |  1-10 ohm.cm
  • Orientation: <100>   |  <111>   |  <110>

Silicon wafer FZ (Float-Zone)

  • Diameter: 2 inch   |  3 inch   |  4 inch   |  6 inch   |  8 inch
  • Type:  un-doped
  • Resistivity: >5000 Ω·cm
  • Orientation: <100>   |  <111>   |  <110>

Silicon dioxide wafer

  • Diameter: 2 inch, 4 inch, 6 inch
  • Thickness of dioxidate: 20 – 2000 nm
  • Polish: SSP  |  DSP
  • dioxide: Single sided dioxide  |  Double sided dioxide

Silicon wafer is hard and brittle (Mohs 7.0); band gap 1.12eV; absorption of light is in the infrared band, with high emissivity and refractive index (3.42); silicon has obvious thermal conductivity and thermal expansion properties (linear expansion coefficient 2.6*10^-6 /K), it has a large surface tension coefficient (surface tension of 720 dyn /cm); silicon has no ductility at room temperature, and it has obvious shaping at temperatures above 800 degrees, Plastic deformation is easy to occur under the effect of stress. The tensile strength of silicon is greater than that of stress reduction, and it is easy to produce bending and warping during processing.

Single-crystal silicon has the physical properties of metalloids and has weaker conductivity. Its conductivity increases with increasing temperature, so it has significant semiconductivity. Ultra-pure single-crystal silicon is an intrinsic semiconductor, doping a certain amount of electrical impurities (dopants) in ultra-pure single-crystal silicon can control the conductivity type and resistivity of single-crystal silicon. Trace group IIIA elements such as B / Al / Ga / In can increase the conductivity to form a p-type silicon semiconductor; if doped with trace group V elements such as P / As / Sb can also increase the conductivity to form n-type silicon semiconductor.

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